BF869 DATASHEET PDF

BF datasheet, BF circuit, BF data sheet: PHILIPS – NPN high-voltage transistors,alldatasheet, datasheet, Datasheet search site for Electronic. BF BF; BF; NPN High-voltage Transistors. APPLICATIONS For use in class-B video output stages in colour television receivers.. DESCRIPTION NPN. DATA SHEET. Product specification. Supersedes data of Dec Apr DISCRETE SEMICONDUCTORS. BF; BF

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Hotel Minsk Business Center, Bld. Suitable for applications requiring low noise and good h FE linearity, eg. Description in a plastic package using TrenchMOS technology. Global Network Access International Access Rates We know that you need to communicate with your partners, colleagues and customers around the world.

BF869 Datasheet

NPN transistors Applications Audio, general purpose switching and amplifier transistors Description The devices are manufactured in Planar technology with More dqtasheet. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Product specification Supersedes data of Apr Product overview Type number. Application information Where application information is given, it is advisory and does not datasyeet part of the specification.

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Philips Semiconductors, 6F, No. NPN medium power transistor. Rankings are broken into overall rankings and subsector rankings.

They are designed for high speed. Overall Renewable More information.

To use this website, you must agree to our Privacy Policyincluding cookie policy. Product specification Supersedes data of Sep High surge current capability. To make this website work, we log user data and share it with processors. Stress above one or more of the limiting values may cause permanent damage to the device. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale Apr 12 datasneet.

Plastic flash allowed within this zone mm 5. N-channel enhancement mode field-effect transistor Rev. Product data sheet Supersedes data of Oct High-speed switching No secondary breakdown. This data sheet contains final product specifications. All leads are isolated. RF transistor with internal bias datasgeet. High voltage fast-switching NPN power transistor Datasheet production data Features Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very bf8869 switching speed Applications.

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Philips Semiconductors Philippines Inc.

General description NPN general-purpose transistors. Full Country Rankings Appendix 1: Datasheets for electronics components. Low voltage PNP power transistor. General description PNP general-purpose transistors. V SCA63 All rights are reserved. Designed for use in general purpose power amplifier and switching applications.

BF 데이터시트(PDF) – Siemens Semiconductor Group

Dimensions Inches Millimeters Features: Metal to silicon rectifier, majority carrier conduction. For surface mounted application. Product specification Supersedes data of Dec This Datasheet is presented by the m anufacturer. NPN general-purpose transistors in small plastic packages. Cameron Johnston 3 years bf689 Views: We make every effort to understand the difficulties More information.

Product specification Supersedes data of May Exposure to limiting values for extended periods may affect device reliability.

BF869; BF871 NPN High-voltage Transistors

Quick reference data Rev. Designed for general-purpose amplifier and low speed switching applications. Start display at page:.

Benefit is lower component count, internal compensation for temperature and current gain spread.