BUK455 DATASHEET PDF

Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent damage to MOS gate oxide. 2. Accessories supplied. BUKA Powermos Transistor: 60v, 41a. N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in. Details, datasheet, quote on part number: BUKA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER BUK Drain-source voltage Drain current (DC).

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Refer to mounting instructions for TO envelopes. No liability will be accepted by the publisher for any consequence of its use. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. August 7 Rev 1.

Product Categories | MOSFET | New Jersey Semiconductor

Observe the general handling precautions for electrostatic-discharge sensitive devices ESDs to prevent damage to MOS gate oxide. Preliminary specification This data sheet contains bu,455 data; supplementary data may be published later.

Measured from contact screw on tab to centre of die Measured from drain lead 6 mm from package to centre of die Measured from source lead 6 mm from package to source bond pad MIN. Refer to mounting instructions for TO envelopes. Normalised continuous drain current.

Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied.

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Application information Where application information is given, it is advisory and does not form part of the specification. Exposure dtaasheet limiting values for extended periods may affect device reliability.

Typical turn-on gate-charge characteristics. August 6 Rev 1. Product specification This data sheet contains final product specifications. Exposure to limiting values for extended periods may affect device reliability. Normalised drain-source on-state resistance. August 6 Rev 1.

BUK Datasheet(PDF) – NXP Semiconductors

Normalised avalanche energy daatasheet. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.

Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. Reproduction in whole or in part is prohibited without the prior written consent of datasueet copyright owner.

Normalised drain-source on-state resistance. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. August 7 Rev 1. New Product View Product Index.

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The information presented in this document does not form part of any quotation or contract, it eatasheet believed to be accurate and reliable and may be changed without dayasheet. Typical reverse diode current. UNIT – – 1. Typical capacitances, Ciss, Coss, Crss. Stress above one or more of the limiting values may cause permanent damage to the device.

VDD August 5 Rev 1. Typical capacitances, Ciss, Coss, Crss.

BUK455600C DATASHEET

Normalised continuous drain current. This data sheet contains final product specifications. Typical turn-on gate-charge characteristics. Avalanche energy test circuit.

This data sheet contains target or goal specifications for product development. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Observe the general handling precautions for electrostatic-discharge sensitive devices ESDs to prevent damage to MOS gate oxide. Typical reverse diode current. Application information Where application information is given, it is advisory and does not form part of the specification.

C Philips Electronics N. TOAB; pin 2 connected to mounting base. bbuk455

Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. Avalanche energy test circuit. Normalised avalanche energy rating.

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